Method for Fabricating a Strained Structure and Structure Formed

ABSTRACT

A field effect transistor includes a substrate comprising a fin structure. The field effect transistor further includes an isolation structure in the substrate. The field effect transistor further includes a source/drain (S/D) recess cavity below a top surface of the substrate. The S/D recess cavity is between the fin structure and the isolation structure. The field effect transistor further includes a strained structure in the S/D recess cavity. The strain structure includes a lower portion. The lower portion includes a first strained layer, wherein the first strained layer is in direct contact with the isolation structure, and a dielectric layer, wherein the dielectric layer is in direct contact with the substrate, and the first strained layer is in direct contact with the dielectric layer. The strained structure further includes an upper portion comprising a second strained layer overlying the first strained layer.

PRIORITY CLAIM

The present application is a divisional application of U.S. applicationSer. No. 15/425,552, filed Feb. 6, 2017, which is a continuation of U.S.application Ser. No. 14/844,247, filed Sep. 3, 2015, which is acontinuation of U.S. application Ser. No. 13/910,633, filed Jun. 5,2013, now U.S. Pat. No. 9,147,594, which is a continuation of U.S.application Ser. No. 12/775,006, filed May 6, 2010, now U.S. Pat. No.8,497,528, issued Jul. 30, 2013, the disclosures of which areincorporated herein by reference in their entireties.

RELATED APPLICATIONS

The present application is related to U.S. patent application Ser. No.12/707,788, filed on Feb. 18, 2010, (Docket Nos. TSMC2008-0432,T5057-R007U), titled MEMORY POWER GATING CIRCUIT AND METHODS; Ser. No.12/758,426, filed on Apr. 12, 2010, (Docket Nos. TSMC2008-0582,T5057-Y048U), titled FINFETS AND METHODS FOR FORMING THE SAME; Ser. No.12/731,325, filed on Mar. 25, 2010, (Docket Nos. TSMC2008-0597,T5057-B033U), titled ELECTRICAL FUSE AND RELATED APPLICATIONS; Ser. No.12/724,556, filed on Mar. 16, 2010, (Docket Nos. TSMC2008-0598,T5057-K002U), titled ELECTRICAL ANTI-FUSE AND RELATED APPLICATIONS; Ser.No. 12/757,203, filed on Apr. 9, 2010, (Docket Nos. TSMC2009-0148,T5057-Y085U), titled STI STRUCTURE AND METHOD OF FORMING BOTTOM VOID INSAME; Ser. No. 12/797,839, filed on Jun. 10, 2010, (Docket Nos.TSMC2009-0278, T5057-K099U), titled FIN STRUCTURE FOR HIGH MOBILITYMULTIPLE-GATE TRANSISTOR; Ser. No. 12/831,842, filed on Jul. 7, 2010,(Docket Nos. TSMC2009-0343, T5057-Y093U), titled METHOD FOR FORMING HIGHGERMANIUM CONCENTRATION SiGe STRESSOR; Ser. No. 12/761,686, filed onApr. 16, 2010, (Docket Nos. TSMC2009-0442, T5057-Y125U), titled FINFETSAND METHODS FOR FORMING THE SAME; Ser. No. 12/766,233, filed on Apr. 23,2010, (Docket Nos. TSMC2009-0444, T5057-K123U), titled FIN FIELD EFFECTTRANSISTOR; Ser. No. 12/757,271, filed on Apr. 9, 2010, (Docket Nos.TSMC2009-0445, T5057-Y113U), titled ACCUMULATION TYPE FINFET, CIRCUITSAND FABRICATION METHOD THEREOF; Ser. No. 12/694,846, filed on Jan. 27,2010, (Docket Nos. TSMC2009-0646, T5057-Y165), titled INTEGRATEDCIRCUITS AND METHODS FOR FORMING THE SAME; Ser. No. 12/638,958, filed onDec. 14, 2009, (Docket Nos. TSMC2009-0738, T5057-B166), titled METHOD OFCONTROLLING GATE THICKNESS IN FORMING FINFET DEVICES; Ser. No.12/768,884, filed on Apr. 28, 2010, (Docket Nos. TSMC2010-0028,T5057-Y228), titled METHODS FOR DOPING FIN FIELD-EFFECT TRANSISTORS;Ser. No. 12/731,411, filed on Mar. 25, 2010, (Docket Nos. TSMC2010-0057,T5057-B218), titled INTEGRATED CIRCUIT INCLUDING FINFETS AND METHODS FORFORMING THE SAME; Ser. No. 12/775,006, filed on May 6, 2010, (DocketNos. TSMC2010-0198, T5057-Y246), titled METHOD FOR FABRICATING ASTRAINED STRUCTURE; Ser. No. 12/886,713, filed Sep. 21, 2010, (DocketNos. TSMC2010-0646, T5057-B325), titled METHOD OF FORMING INTEGRATEDCIRCUITS; Ser. No. 12/941,509, filed Nov. 8, 2010, (Docket Nos.TSMC2010-0561, T5057-B337), titled MECHANISMS FOR FORMING ULTRA SHALLOWJUNCTION; Ser. No. 12/900,626, filed Oct. 8, 2010, (Docket Nos.TSMC2010-0581, T5057-B330), titled TRANSISTOR HAVING NOTCHED FINSTRUCTURE AND METHOD OF MAKING THE SAME; Ser. No. 12/903,712, filed Oct.13, 2010, (Docket Nos. TSMC2010-0731, T5057-R350), titled FINFET ANDMETHOD OF FABRICATING THE SAME; 61/412,846, filed Nov. 12, 2010, (DocketNos. TSMC2010-0839, T5057-B388PRO), 61/394,418, filed Oct. 19, 2010,(Docket Nos. TSMC2010-0926, T5057-Y351PRO), titled METHODS OF FORMINGGATE DIELECTRIC MATERIAL and 61/405,858, filed Oct. 22, 2010, (DocketNos. TSMC2010-0928, T5057-R368PRO), titled METHODS OF FORMINGSEMICONDUCTOR DEVICES.

TECHNICAL FIELD

This disclosure relates to integrated circuit fabrication, and moreparticularly to a field effect transistor with a strained structure.

BACKGROUND

As the semiconductor industry has progressed into nanometer technologyprocess nodes in pursuit of higher device density, higher performance,and lower costs, challenges from both fabrication and design issues haveresulted in the development of three dimensional designs, such as a finfield effect transistor (FinFET). A typical FinFET is fabricated with athin vertical “fin” (or fin structure) extending from a substrate, forexample, etched into a silicon layer of the substrate. The channel ofthe FinFET is formed in this vertical fin. A gate is provided over(e.g., wrapping) the fin. Having a gate on both sides of the channelallows gate control of the channel from both sides. Further advantagesof FinFET comprise reducing the short channel effect and enabling highercurrent flow.

FIG. 1A shows an isometric view of a conventional FinFET 100, and FIG.1B illustrates a cross-sectional view of the FinFET 100 taken along theline a-a of FIG. 1A. The fin 104/108 comprises a raised active region104 above a semiconductor substrate 102. Fin 104/108 is surrounded by ashallow trench isolation (STI) structure 106. A gate structure 110comprising a gate dielectric 112, a gate electrode 114, and an optionalhardmask layer 116 is formed above the fin 104/108. Sidewall spacers 118are formed on both sides of the gate structure 110. Further, a portionof the fin 104/108 contains strained structures 108 in source and drain(S/D) recess cavities of the FinFET 100. The strained structures 108 areformed after a fin recessing process and an epitaxial growth step. Thestrained structures 108 utilizing epitaxial silicon germanium (SiGe) maybe used to enhance carrier mobility.

However, there are challenges to implement such features and processesin complementary metal-oxide-semiconductor (CMOS) fabrication. As thegate length and spacing between devices decrease, these problems areexacerbated. For example, an ordered atomic arrangement does not existdue to lattice mismatch between the portion 104 of the fin 104/108 andstrained portions 108. Thus, strain-induced crystal defects 108 a maybecome embedded in the strained structure 108. The crystal defects 108 amay provide carrier transportation paths during device operation,thereby increasing the likelihood of device instability and/or devicefailure.

Accordingly, what are needed are methods for fabricating areduced-defect strained structure.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1A shows an isometric view of a conventional FinFET;

FIG. 1B illustrates a cross-sectional view of the FinFET taken along theline a-a of FIG. 1A;

FIG. 2 is a flowchart illustrating a method for fabricating strainedstructures according to various aspects of the present disclosure;

FIGS. 3A-F show schematic cross-sectional views of a FinFET comprising astrained structure at various stages of fabrication according to variousaspects of the present disclosure; and

FIGS. 4A-E show schematic cross-sectional views of a FinFET comprising astrained structure at various stages of fabrication according to variousaspects of the present disclosure.

DESCRIPTION

It is understood that the following disclosure provides many differentembodiments, or examples, for implementing different features of thedisclosure. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Forexample, the formation of a first feature over or on a second feature inthe description that follows may include embodiments in which the firstand second features are formed in direct contact, and may also includeembodiments in which additional features may be formed between the firstand second features, such that the first and second features may not bein direct contact. In addition, the present disclosure may repeatreference numerals and/or letters in the various examples. Thisrepetition is for the purpose of simplicity and clarity and does not initself dictate a relationship between the various embodiments and/orconfigurations discussed.

Referring to FIG. 2, illustrated is a flowchart of a method 200 forfabricating a semiconductor device according to various aspects of thepresent disclosure. The method 200 begins with block 202 in which asubstrate is provided. The method 200 continues with block 204 in whicha recess cavity comprising an upper portion and a lower portion may beformed in the substrate, wherein one sidewall of the recess cavity isdielectric and other sidewall of the recess cavity is the substrate. Themethod 200 continues with block 206 in which a dielectric film may beformed on the substrate sidewall portion and a bottom portion of therecess cavity. The method 200 continues with block 208 in which removingthe dielectric film may include removing the dielectric film on thebottom portion of the recess cavity. The method 200 continues with block210 in which epi-growing a first strained layer may be epi-grown in thelower portion of the recess cavity adjacent to a portion of thedielectric film. The method 200 continues with block 212 in which aportion of the dielectric film not adjacent to the first strained layermay be removed. The method 200 continues with block 214 in which asecond strained layer may be epi-grown in the upper portion of therecess cavity. The discussion that follows illustrates variousembodiments of semiconductor devices that can be fabricated according tothe method 200 of FIG. 2.

Referring to FIGS. 3A-3F and 4A-4E, illustrated are schematiccross-sectional views of strained structures 308, 408 (in FIGS. 3F and4E) of semiconductor devices 300, 400 at various stages of fabricationaccording to various aspects of the present disclosure. As employed inthe present disclosure, the term semiconductor devices 300, 400 refer toa FinFET. The FinFET refers to any fin-based, multi-gate transistor. Thesemiconductor devices 300, 400 may be included in a microprocessor,memory cell, and/or other integrated circuit (IC). It is noted that themethod of FIG. 2 does not produce completed semiconductor devices 300,400. Completed semiconductor devices 300, 400 may be fabricated usingcomplementary metal-oxide-semiconductor (CMOS) technology processing.Accordingly, it is understood that additional processes may be providedbefore, during, and after the method 200 of FIG. 2, and that some otherprocesses may only be briefly described herein. Also, FIGS. 2 through 4Eare simplified for a better understanding of the present disclosure. Forexample, although the figures illustrate the semiconductor devices 300,400, it is understood the IC may comprise a number of other devicescomprising resistors, capacitors, inductors, fuses, etc.

Referring to FIG. 3A, a substrate 102 is provided having a fin structure104. In one embodiment, the substrate 102 comprises a crystallinesilicon substrate (e.g., wafer). The substrate 102 may comprise variousdoped regions depending on design requirements (e.g., p-type substrateor n-type substrate). In some embodiments, the doped regions may bedoped with p-type or n-type dopants. For example, the doped regions maybe doped with p-type dopants, such as boron or BF.sub.2; n-type dopants,such as phosphorus or arsenic; and/or combinations thereof. The dopedregions may be configured for an n-type FinFET, or alternativelyconfigured for a p-type FinFET.

The substrate 102 may alternatively be made of some other suitableelementary semiconductor, such as diamond or germanium; a suitablecompound semiconductor, such as gallium arsenide, silicon carbide,indium arsenide, or indium phosphide; or a suitable alloy semiconductor,such as silicon germanium carbide, gallium arsenic phosphide, or galliumindium phosphide. Further, the substrate 102 may include an epitaxiallayer (epi-layer), may be strained for performance enhancement, and/ormay include a silicon-on-insulator (SOI) structure.

The fin structure 104, formed over the substrate 102, comprises one ormore fins. In the present embodiment, for simplicity, the fin structure104 comprises a single fin. The fin comprises any suitable material, forexample, the fin structure 104 comprises silicon. The fin structure 104may further comprise a capping layer disposed on the fin, which may be asilicon-capping layer.

The fin structure 104 is formed using any suitable process comprisingvarious deposition, photolithography, and/or etching processes. Anexemplary photolithography process may include forming a photoresistlayer (resist) overlying the substrate 102 (e.g., on a silicon layer),exposing the resist to a pattern, performing a post-exposure bakeprocess, and developing the resist to form a masking element includingthe resist. The masking element may then be used to etch the finstructure 104 into the silicon layer. The fin structure 104 may beetched using reactive ion etching (RIE) processes and/or other suitableprocesses. In an example, the silicon fin 104 is formed by usingpatterning and etching of a portion of the silicon substrate 102. Inanother example, silicon fins of the fin structure 104 may be formed byusing patterning and etching of a silicon layer deposited overlying aninsulator layer (for example, an upper silicon layer of asilicon-insulator-silicon stack of an SOI substrate).

Isolation structure 106 may be formed on the substrate 102 to isolatethe various doped regions. The isolation structure 106 may utilizeisolation technology, such as local oxidation of silicon (LOCOS) orshallow trench isolation (STI), to define and electrically isolate thevarious doped regions. In the present embodiment, the isolationstructure 106 includes a STI. The isolation structure 106 may comprisesilicon oxide, silicon nitride, silicon oxynitride, fluoride-dopedsilicate glass (FSG), a low-K dielectric material, and/or combinationsthereof. The isolation structure 106, and in the present embodiment, theSTI, may be formed by any suitable process. As one example, theformation of the STI may include patterning the semiconductor substrate102 by a conventional photolithography process, etching a trench in thesubstrate 102 (for example, by using a dry etching, wet etching, and/orplasma etching process), and filling the trench (for example, by using achemical vapor deposition process) with a dielectric material. In someembodiments, the filled trench may have a multi-layer structure such asa thermal oxide liner layer filled with silicon nitride or siliconoxide.

Still referring to FIG. 3A, a gate stack 110 is formed over thesubstrate 102 and over a portion of the fin structure 104. The gatestack 110 typically comprises a gate dielectric layer 112 and a gateelectrode layer 114. The gate stack 110 may be formed using any suitableprocess, including the processes described herein.

In one example, the gate dielectric layer 112 and gate electrode layer114 are sequentially deposited on the substrate 102 and over a portionof the fin structure 104. In some embodiments, the gate dielectric layer112 may include silicon oxide, silicon nitride, silicon oxy-nitride, orhigh-k dielectric. High-k dielectrics comprise metal oxides. Examples ofmetal oxides used for high-k dielectrics include oxides of Li, Be, Mg,Ca, Sr, Sc, Y, Zr, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er,Tm, Yb, Lu and mixtures thereof. In the present embodiment, the gatedielectric layer 112 is a high-k dielectric layer with a thickness inthe range of about 10 to 30 angstroms. The gate dielectric layer 112 maybe formed using a suitable process such as atomic layer deposition(ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD),thermal oxidation, UV-ozone oxidation, or combinations thereof. The gatedielectric layer 112 may further comprise an interfacial layer (notshown) to reduce damage between the gate dielectric layer 112 and thefin structure 104. The interfacial layer may comprise silicon oxide.

In some embodiments, the gate electrode layer 114 may comprise a singlelayer or multilayer structure. In the present embodiment, the gateelectrode layer 114 may comprise poly-silicon. Further, the gateelectrode layer 114 may be doped poly-silicon with uniform ornon-uniform doping. Alternatively, the gate electrode layer 114 mayinclude a metal such as Al, Cu, W, Ti, Ta, TiN, TiAl, TiAlN, TaN, NiSi,CoSi, other conductive materials with a work function compatible withthe substrate material, or combinations thereof. In the presentembodiment, the gate electrode layer 114 comprises a thickness in therange of about 30 nm to about 60 nm. The gate electrode layer 114 may beformed using a suitable process such as ALD, CVD, PVD, plating, orcombinations thereof.

Then, a layer of photoresist is formed over the gate stack 110 by asuitable process, such as spin-on coating, and patterned to form apatterned photoresist feature by a proper lithography patterning method.In one embodiment, a width of the patterned photoresist feature is inthe range of about 15 to 45 nm. The patterned photoresist feature canthen be transferred using a dry etching process to the underlying layers(i.e., the gate electrode layer 114 and the gate dielectric layer 112)to form the gate stack 110. The photoresist layer may be strippedthereafter.

In another example, a hard mask layer 116 is formed over the gate stack110; a patterned photoresist layer is formed on the hard mask layer 116;the pattern of the photoresist layer is transferred to the hard masklayer 116 and then transferred to the gate electrode layer 114 and thegate dielectric layer 112 to form the gate stack 110. The hard masklayer 116 comprises silicon oxide. Alternatively, the hard mask layer116 may optionally comprise silicon nitride, silicon oxynitride, and/orother suitable dielectric materials, and may be formed using a methodsuch as CVD or PVD. The hard mask layer 116 has a thickness in the rangefrom about 100 to 800 angstroms.

Still referring to FIG. 3A, the semiconductor device 300 furthercomprises a dielectric layer 118 formed over the substrate 102 and thegate stack 110. The dielectric layer 118 may include silicon oxide,silicon nitride, silicon oxy-nitride, or other suitable material. Thedielectric layer 118 may comprise a single layer or multilayerstructure. The dielectric layer 118 may be formed by CVD, PVD, ALD, orother suitable technique. The dielectric layer 118 comprises a thicknessranging from about 5 to 15 nm. Then, an anisotropic etching is performedon the dielectric layer 118 to form a pair of spacers 118 on two sidesof the gate stack 110.

Still referring to FIG. 3A, other portions of the fin structure 104(i.e., portions other than where the gate stack 110 and spacers 118 areformed thereover) are recessed to form source and drain (S/D) recesscavities 130 below a top surface of the substrate 102 disposed betweenthe gate stack 110 and the isolation structure 106. In one embodiment,using the pair of spacers 118 as hard masks, a biased etching process isperformed to recess a top surface of the fin structure 104 that areunprotected or exposed to form the S/D recess cavities 130. In anembodiment, the etching process may be performed under a pressure ofabout 1 mTorr to 1000 mTorr, a power of about 50 W to 1000 W, a biasvoltage of about 20 V to 500 V, at a temperature of about 40° C. to 60°C., using a HBr and/or Cl2 as etch gases. Also, in the embodimentsprovided, the bias voltage used in the etching process may be tuned toallow better control of an etching direction to achieve desired profilesfor the S/D recess cavities 130. The recess cavity 130 may comprise anupper portion 130 u and a lower portion 130 l separated by the dottedline in FIG. 3A. One sidewall 130 i of the recess cavity 130 isdielectric and other sidewall 130 f of the recess cavity 130 is thesubstrate 102. In one embodiment, a ratio of a height of the upperportion 130 u to a height of the lower portion 130 l may be from 0.8 to1.2. In some embodiments, a height 130 a between the top surface of thesubstrate 102 and a bottom of the S/D recess cavity 130 is in the rangeof about 300 to 2000 nm.

Referring to FIG. 3B, following formation of the recess cavity 130, adielectric film 132 may be formed along the substrate surface of therecess cavity 130. The dielectric film 132 comprises a sidewall portion132 w and a bottom portion 132 b. The dielectric film 132 may be formedof silicon oxide or silicon oxynitride grown using a thermal oxidationprocess. For example, the dielectric film 132 can be grown by a rapidthermal oxidation (RTO) process or in a conventional annealing process,which includes oxygen or NO.sub.2. A thickness t.sub.1 of the dielectricfilm 132 may be in the range of about 20 to 100 angstroms.

Referring to FIG. 3C, subsequent to the formation of the dielectric film132, a dry etching process is performed to remove the bottom portion 132b of the dielectric film 132, whereby the sidewall portion 132 w of thedielectric film 132 is not removed. For example, the dry etching processmay be a plasma etch process performed under a source power of about 120to 160 W, and a pressure of about 450 to 550 mTorr, using BF3, H2, andAr as etching gases.

Referring to FIG. 3D, after the bottom portion 132 b of the dielectricfilm 132 is removed, a first strained layer 136 is epi-grown in thelower portion 1301 of the recess cavities 130 adjacent to a portion ofthe dielectric film 132. In one embodiment, a first strained layer 136comprising silicon germanium (SiGe) is epi-grown by a low-pressurechemical vapor deposition (LPCVD) process. The first strained layer 136may serve as a relaxation layer and trap defects 136 a to eliminatecrystal defects in a second strained layer 138 (shown in FIG. 3F) in thesource and drain regions of the n-type FinFET. The LPCVD process isperformed at a temperature of about 400 to 800° C. and under a pressureof about 1 to 200 Torr, using SiH.sub.4 and GeH.sub.4 as reaction gases.In another embodiment, a first strained layer 136 comprising siliconcarbon (SiC) is epi-grown by a LPCVD process. The first strained layer136 may serve as a relaxation layer and trap defects 136 a to eliminatecrystal defects in a second strained layer 138 (shown in FIG. 3F) in thesource and drain regions of the p-type FinFET. The LPCVD process isperformed at a temperature of about 400 to 800° C. and under a pressureof about 1 to 200 Torr, using SiH.sub.4 and CH.sub.4 as reaction gases.A thickness t.sub.2 of the first strained layer 136 may be in the rangeof about 15 to 45 nm. The thickness t.sub.1 of the dielectric film 132is less than the thickness t.sub.2 of the first strained layer 136.

Referring to FIG. 3E, subsequent to the formation of the first strainedlayer 136, a top portion of the sidewall portion 132 w of the dielectricfilm 132 not adjacent to the first strained layer 136 has been removedusing a wet etching process, for example, by dipping the substrate 102in hydrofluoric acid (HF), exposing a top surface 132 a of the remainingsidewall portion 132 w of the dielectric film 132. Because the wetetching process has higher etch selectivity for oxide than to silicon,SiGe, and SIC, the etch process removes the dielectric film 132 fasterthan the fin structure 104 and the first strained layer 136.

In the present embodiment, the first strained layer 136 is disposedbetween the isolation structure 106 and the remaining sidewall portion132 w of the dielectric film 132. In an embodiment, a top surface 136 bof the first strained layer 136 and the top surface 132 a of theremaining sidewall portion 132 w of the dielectric film 132 aresubstantially aligned. In another embodiment, the top surface 136 b ofthe first strained layer 136 and the top surface 132 a of the remainingsidewall portion 132 w of the dielectric film 132 are below a topsurface 106 a of the isolation structure 106.

Referring to FIG. 3F, after the top portion of the sidewall portion 132w of the dielectric film 132 is removed, a second strained layer 138overlying the first strained layer 136 and remaining sidewall portion132 w of the dielectric film 132 is epi-grown in the upper portion 130 uof the recess cavities 130 in the fin structure 104. Further, the firststrained layer 136, remaining sidewall portion 132 w of the dielectricfilm 132, and second strained layer 138 are collectively hereinafterreferred to as a strained structure 308. It should be noted that thefirst strained layer 136 serves as a relaxation layer and may trapdefects 136 a to eliminate crystal defects in the second strained layer138. Crystal defects in the second strained layer 138 may providecarrier transportation paths during device operation, thereby increasingthe likelihood of device instability and/or device failure. Accordingly,the above method of fabricating a semiconductor device 300 may form areduced-defect strained structure 308 to enhance carrier mobility andupgrade the device performance.

In one embodiment, the second strained layer 138, such as siliconcarbide (SiC), is epi-grown by a LPCVD process to form the source anddrain regions of the n-type FinFET. An example the LPCVD process for thegrowth of SiC is performed at a temperature of about 400 to 800° C. andunder a pressure of about 1 to 200 Torr, using SiH.sub.4 and CH.sub.4 asreaction gases. In another embodiment, the second strained layer 138,such as silicon germanium (SiGe), is epi-grown by a LPCVD process toform the source and drain regions of the p-type FinFET. The LPCVDprocess is performed at a temperature of about 400 to 800° C. and undera pressure of about 1 to 200 Torr, using SiH.sub.4 and GeH.sub.4 asreaction gases. In still another embodiment, the second strained layer138, such as silicon, is epi-grown by a LPCVD process to form the sourceand drain regions of both the p-type FinFET and n-type FinFET. The LPCVDprocess is performed at a temperature of about 400 to 800° C. and undera pressure of about 1 to 200 Torr, using SiH.sub.4 as a reaction gas.

Alternatively, FIG. 4A shows the substrate 102 of FIG. 3A afterdeposition of a dielectric film 142 by a CVD process. The dielectricfilm 142 formed by CVD will deposit over all exposed surfaces, and thusmay be formed on the isolation structure 106, hard mask layer 116,spacers 118, and recess cavities 130. The dielectric film 142 maycomprise a first sidewall portion 142 w, a second sidewall portion 142s, and a bottom portion 142 b. The dielectric film 142 may be formed ofsilicon oxide or silicon oxynitride deposited using a CVD process. Forexample, the dielectric film 142 can be deposited under a pressure lessthan 10 mTorr and a temperature of about 350° C. to 500° C., usingSiH.sub.4 and N.sub.2O as reacting precursors. A thickness t.sub.3 ofthe dielectric film 142 may be in the range of about 20 to 100angstroms.

Referring to FIG. 4B, subsequent to the formation of the dielectric film142, a dry etching process is performed to remove the bottom portion 142b of the dielectric film 142, whereby the first sidewall portion 142 wand second sidewall portion 142 s of the dielectric film 142 are notremoved. For example, the dry etching process may be performed under asource power of about 120 to 160 W, and a pressure of about 450 to 550mTorr, using BF3, H2, and Ar as etching gases.

Referring to FIG. 4C, after the bottom portion 142 b-of the dielectricfilm 142 removing process, a first strained layer 146 is epi-grown inthe lower portion 130 l of the recess cavities 130 adjacent to a portionof the dielectric film 142. In one embodiment, a first strained layer146 comprising silicon germanium (SiGe) is epi-grown by a LPCVD process.The first strained layer 146 may serve as a relaxation layer and trapdefects 146 a to eliminate crystal defects in a second strained layer148 (shown in FIG. 4E) in the source and drain regions of the n-typeFinFET. The LPCVD process is performed at a temperature of about 400 to800° C. and under a pressure of about 1 to 200 Torr, using SiH.sub.4 andGeH.sub.4 as reaction gases. In another embodiment, a first strainedlayer 146 comprising silicon carbide (SiC) is epi-grown by a LPCVDprocess. The first strained layer 146 may serve as a relaxation layerand trap defects 146 a to eliminate crystal defects in the secondstrained layer 148 (shown in FIG. 4E) in the source and drain regions ofthe p-type FinFET. In one embodiment, LPCVD process for SiC depositionis performed at a temperature of about 400 to 800 C. and under apressure of about 1 to 200 Torr, using SiH:sub.4 and CH.sub.4 asreaction gases. A thickness t.sub.4 of the first strained layer 146 maybe in the range of about 12 to 40 nm. The thickness t.sub.3 of thedielectric film 142 is less than the thickness t.sub.4 of the firststrained layer 146.

Referring to FIG. 4D, subsequent to the formation of the first strainedlayer 146, top portions of the first and second sidewall portions 142 w,142 s of the dielectric film 142 not adjacent to the first strainedlayer 146 are removed using a wet etching process, for example, bydipping the substrate 102 in hydrofluoric acid (HF), exposing topsurfaces 142 a, 142 b of the remaining first and second sidewallportions 142 w, 142 s of the dielectric film 142. Because the wetetching process preferentially etches oxide over silicon, SiGe, and SiC,the etch process removes the dielectric film 142 faster than the finstructure 104 and the first strained layer 146.

In the present embodiment, the first strained layer 146 is disposedbetween the isolation structure 106 and the remaining first sidewallportion 142 w of the dielectric film 142. Further, the remaining secondsidewall portion 142 s of dielectric film 142 is between the firststrained layer 146 and the isolation structure 106. In an embodiment, atop surface 146 b of the first strained layer 146 and the top surfaces142 a, 142 b of the remaining first and second sidewall portions 142 w,142 s of the dielectric film 142 are substantially aligned. In anotherembodiment, the top surface 146 b of the first strained layer 136 andthe top surfaces 142 a, 142 b of the remaining first and second sidewallportions 142 w, 142 s of the dielectric film 142 are below the topsurface 106 a of the isolation structure 106.

Referring to FIG. 4E, after the top portions of the first and secondsidewall portions 142 w, 142 s of the dielectric film 142 are removed, asecond strained layer 148 overlying the first strained layer 146 andremaining first and second sidewall portions 142 w, 142 s of thedielectric film 142 is epi-grown in the upper portion 130 u of therecess cavities 130. Further, the first strained layer 146, remainingfirst sidewall portion 142 w and second sidewall portion 142 w of thedielectric film 142, and second strained layer 148 are collectivelyhereinafter referred to as a strained structure 408. It should be notedthat the first strained layer 146 serves as a relaxation layer and maytrap defects 146 a to eliminate crystal defects in the second strainedlayer 148. Crystal defects in the second strained layer 148 may providecarrier transportation paths during device operation, thereby increasingthe likelihood of device instability and/or device failure. Accordingly,the above method of fabricating a semiconductor device 400 may form areduced-defect strained structure 408 to enhance carrier mobility andupgrade the device performance.

In one embodiment a second strained layer 148 comprising silicon carbide(SiC) is epi-grown by a LPCVD process to form the source and drainregions of the n-type FinFET. The LPCVD process is performed at atemperature of about 400 to 800° C. and under a pressure of about 1 to200 Torr, using SiH.sub.4 and CH.sub.4 as reaction gases. In anotherembodiment a second strained layer 148 comprising silicon germanium(SiGe) is epi-grown by a LPCVD process to form the source and drainregions of the p-type FinFET. The LPCVD process is performed at atemperature of about 400 to 800° C. and under a pressure of about 1 to200 Torr, using SiH.sub.4 and GeH.sub.4 as reaction gases. In stillanother embodiment a second strained layer 148 comprising silicon isepi-grown by a LPCVD process to form the source and drain regions ofboth the p-type FinFET and n-type FinFET. The LPCVD process is performedat a temperature of about 400 to 800° C. and under a pressure of about 1to 200 Torr, using SiH.sub.4 as a reaction gas.

After the steps shown in FIGS. 2, 3 and 4 have been performed,subsequent processes, comprising silicidation and interconnectprocessing, are typically performed to complete the semiconductor device300 and 400 fabrication.

One aspect of this description relates to a field effect transistor. Thefield effect transistor includes a substrate comprising a fin structure.The field effect transistor further includes an isolation structure inthe substrate. The field effect transistor further includes asource/drain (S/D) recess cavity below a top surface of the substrate.The S/D recess cavity is between the fin structure and the isolationstructure. The field effect transistor further includes a strainedstructure in the S/D recess cavity. The strain structure includes alower portion. The lower portion includes a first strained layer,wherein the first strained layer is in direct contact with the isolationstructure, and a dielectric layer, wherein the dielectric layer is indirect contact with the substrate, and the first strained layer is indirect contact with the dielectric layer. The strained structure furtherincludes an upper portion comprising a second strained layer overlyingthe first strained layer.

Another aspect of this description relates to a method for fabricating asemiconductor device. The method includes forming a recess cavitycomprising an upper portion and a lower portion in a substrate, whereinthe recess cavity includes a sidewall defined by an isolation structure.The method further includes forming a dielectric film on a bottomportion and a sidewall of the recess cavity opposite the isolationstructure. The method further includes removing the dielectric film onthe bottom portion of the recess cavity. The method further includesforming a first strained layer in the lower portion of the recess cavityin direct contact with the dielectric film, wherein the first strainedlayer is between the dielectric film and the isolation structure. Themethod further includes forming a second strained layer over the firststrained layer in the upper portion of the recess cavity.

Still another aspect of this description relates to a field effecttransistor. The field effect transistor includes an isolation structurein a substrate. The field effect transistor further includes asource/drain (S/D) recess cavity below a top surface of the substrate,wherein a sidewall of the S/D recess cavity is defined by the isolationstructure. The field effect transistor further includes a strainedstructure in the S/D recess cavity. The strain structure includes alower portion. The lower portion includes a defect trapping layer,wherein the first defect trapping layer is in direct contact with theisolation structure, and a dielectric layer, wherein the dielectriclayer is in direct contact with the substrate, and the defect trappinglayer is in direct contact with the dielectric layer. The strainedstructure further includes an upper portion comprising a strained layeroverlying the defect trapping layer.

While the preferred embodiments have been described by way of example,it is to be understood that the disclosure is not limited to thedisclosed embodiments. To the contrary, it is intended to cover variousmodifications and similar arrangements (as would be apparent to thoseskilled in the art). Therefore, the scope of the disclosure should beaccorded the broadest interpretation so as to encompass all suchmodifications and similar arrangements. The disclosure can be used toform or fabricate a strained structure for a semiconductor device. Inthis way, a strained structure having no defect in a semiconductordevice is fabricated.

What is claimed is:
 1. A method comprising: forming a fin structure on asubstrate; forming a gate structure over the fin structure; forming adielectric isolation structure in the substrate; forming a recess in thefin structure to expose a portion of the dielectric isolation structure;forming a dielectric layer in the recess including on the portion of thedielectric isolation structure; removing a first portion of thedielectric layer to expose a portion of the fin structure; forming afirst epitaxial layer on the portion of the fin structure; and forming asecond epitaxial layer on the first epitaxial layer, the secondepitaxial layer interfacing with the gate structure.
 2. The method ofclaim 1, wherein the removing of the first portion of the dielectriclayer to expose the portion of the fin structure includes removing asecond portion of the dielectric layer to expose the portion of thedielectric isolation structure.
 3. The method of claim 1, wherein asecond portion of the dielectric layer extends along an edge of the finstructure after the removing of the first portion of the dielectriclayer to expose the portion of the fin structure.
 4. The method of claim3, wherein the first epitaxial layer interfaces with the second portionof the dielectric layer after the forming of the first epitaxial layeron the portion of the fin structure, and wherein the second epitaxiallayer interfaces with the first epitaxial layer and the second portionof the dielectric layer after the forming of the second epitaxial layeron the first epitaxial layer.
 5. The method of claim 1, wherein a secondportion of the dielectric layer extends along an edge of the finstructure and a third portion of the dielectric layer extends along anedge of the dielectric isolation structure after the removing of thefirst portion of the dielectric layer to expose the portion of the finstructure, and wherein the first epitaxial layer extends from the secondportion of the dielectric layer to the third portion of the dielectriclayer after the forming of the first epitaxial layer on the portion ofthe fin structure.
 6. The method of claim 1, wherein a second portion ofthe dielectric layer extends along an edge of the fin structure andalong a sidewall spacer of the gate structure after the removing of thefirst portion of the dielectric layer to expose the portion of the finstructure, and wherein the second portion of the dielectric layerextends along the edge of the fin structure and along the sidewallspacer of the gate structure after the forming of the first epitaxiallayer on the portion of the fin structure.
 7. The method of claim 6,further comprising removing the second portion of the dielectric fromthe sidewall spacer prior to the forming of the second epitaxial layeron the first epitaxial layer.
 8. A method comprising: forming a finstructure on a substrate; removing a portion of the fin structure toform a recess; forming an isolation structure in the substrate; forminga dielectric film along a sidewall of the recess defined by the finstructure; forming a first epitaxial layer in the recess, wherein thefirst epitaxial layer is in direct contact with the dielectric filmformed along the sidewall of the recess and is in direct contact withthe isolation structure; and forming a second epitaxial layer over thefirst epitaxial layer.
 9. The method of claim 8, removing a portion ofthe dielectric film to expose a portion of the fin structure, andwherein forming the second epitaxial layer over the first epitaxiallayer includes forming the second epitaxial layer directly on theexposed portion of the fin structure.
 10. The method of claim 8, whereinforming the dielectric film along the sidewall of the recess defined bythe fin structure includes forming the dielectric film along anothersidewall of the recess defined by the isolation structure.
 11. Themethod of claim 10, further comprising removing the dielectric filmformed along the another sidewall of the recess to expose a portion ofthe isolation structure, and wherein forming the first epitaxial layerin the recess includes forming the first epitaxial directly on theexposed portion of the isolation structure.
 12. The method of claim 8,further comprising after forming the first epitaxial layer in therecess, removing a first portion of the dielectric film along thesidewall of the recess such that a second portion of the dielectric filmremains disposed within recess.
 13. The method of claim 12, wherein atop surface of the second portion of the dielectric film issubstantially coplanar with a top surface of the first epitaxial layer.14. The method of claim 8, wherein forming the second epitaxial layerover the first epitaxial layer includes forming the second epitaxiallayer over the dielectric film.
 15. The method of claim 14, whereinforming the second epitaxial layer over the first epitaxial layerincludes forming the second epitaxial layer directly on a top surface ofthe first epitaxial layer and forming the second epitaxial layerdirectly on a top surface of the dielectric film, wherein the topsurfaces of the first epitaxial layer and the dielectric film face awayfrom the substrate.
 16. A method comprising: forming a fin structure ona substrate; forming a gate structure over the fin structure; forming adielectric isolation structure in the substrate forming a recess in thefin structure, wherein a first portion of the fin structure defines abottom surface and a second portion of the fin structure defines a sidesurface of the recess; forming a dielectric layer in the recess on thefirst portion and the second portion of the fin structure; removing afirst portion of the dielectric layer to expose the first portion of thefin structure, wherein a second portion of the dielectric layer isdisposed on the second portion of the fin structure; forming a firstsemiconductor layer directly on the first portion of the fin structureand directly on the second portion of the dielectric layer; and forminga second semiconductor layer on the first semiconductor layer, thesecond semiconductor layer interfacing with the gate structure.
 17. Themethod of claim 16, wherein an edge of the dielectric isolationstructure defines an opposing side surface to the side surface definedby the first portion of the fin structure, and wherein the forming ofthe dielectric layer in the recess on the first portion and the secondportion of the fin structure include forming a third portion of thedielectric layer on the edge of the dielectric isolation structure. 18.The method of claim 17, wherein the forming of the first semiconductorlayer directly on the first portion of the fin structure and directly onthe second portion of the dielectric layer includes forming the firstsemiconductor layer directly on the third portion of the dielectriclayer.
 19. The method of claim 17, further comprising removing the thirdportion of the dielectric layer to expose the edge of the dielectricisolation structure, and wherein the forming of the first semiconductorlayer directly on the first portion of the fin structure and directly onthe second portion of the dielectric layer includes forming the firstsemiconductor layer directly on the edge of the dielectric isolationstructure.
 20. The method of claim 16, wherein the first semiconductorlayer is formed of a different material than the second semiconductorlayer.